[B-6-4] A Comprehensive Study of Coulomb Scattering Mobility in Short-Channel Process-Induced Strain NMOSFETs

W. P. N. Chen^1,2、P. Su²、K. Goto¹ (1.Taiwan Semiconductor Manufacturing Co., Ltd.、2.National Chiao Tung Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.B-6-4