Modeling of MOSFET Characteristics using In-line Inspection Data and Statistical Explanation of Global Variation

M. Kurihara; M. Izawa; J. Tanaka; K. Kawai; R. Yoshifuku; T. Maruyama; T. Imbe; Y. Koide; N. Fujiwara

doi:https://doi.org/10.7567/SSDM.2008.B-7-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-7-3] Modeling of MOSFET Characteristics using In-line Inspection Data and Statistical Explanation of Global Variation

M. Kurihara¹, M. Izawa¹, J. Tanaka¹, K. Kawai², R. Yoshifuku², T. Maruyama², T. Imbe², Y. Koide², N. Fujiwara² (1.Hitachi, Ltd., 2.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.B-7-3

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