[B-7-3] Modeling of MOSFET Characteristics using In-line Inspection Data and Statistical Explanation of Global Variation

M. Kurihara¹、M. Izawa¹、J. Tanaka¹、K. Kawai²、R. Yoshifuku²、T. Maruyama²、T. Imbe²、Y. Koide²、N. Fujiwara² (1.Hitachi, Ltd.、2.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.B-7-3