[B-8-4] Steeper Indium Halo Formation of nMOSFET by Reducing Interstitial Supersaturation with Flash Lamp pre-Annealing and its Modeling with Atomistic Kinetic Monte Carlo

T. Sawada²、N. Zographos⁴、H. Yoshimura¹、T. Sanuki¹、T. Ito¹、T. Itani¹、H. Aikawa¹、O. Fujii¹、N. Kariya³、M. Oulmane⁴、R. Gull⁴、Y. Akiyama³、M. Ikeda³、M. Iwai¹、F. Matsuoka¹ (1.Toshiba Corp.、2.Toshiba Information Systems Tech. Inc.、3.NEC Electronics Corp., Japan、4.Synopsys Switzerland LLC, Switzerland)

https://doi.org/10.7567/SSDM.2008.B-8-4