[B-8-4] Steeper Indium Halo Formation of nMOSFET by Reducing Interstitial Supersaturation with Flash Lamp pre-Annealing and its Modeling with Atomistic Kinetic Monte Carlo

T. Sawada², N. Zographos⁴, H. Yoshimura¹, T. Sanuki¹, T. Ito¹, T. Itani¹, H. Aikawa¹, O. Fujii¹, N. Kariya³, M. Oulmane⁴, R. Gull⁴, Y. Akiyama³, M. Ikeda³, M. Iwai¹, F. Matsuoka¹ (1.Toshiba Corp., 2.Toshiba Information Systems Tech. Inc., 3.NEC Electronics Corp., Japan, 4.Synopsys Switzerland LLC, Switzerland)

https://doi.org/10.7567/SSDM.2008.B-8-4