[B-9-5] Characteristics of Thin-Body <100> Channel SOI MOSFETs by using Two Step Elevated Silicon Eptaxtial Process

K. Ishikawa¹、T. Iwamatsu¹、T. Terada¹、H. Oda¹、Y. Inoue¹ (1.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.B-9-5