[C-3-6] Fabrication of a Standby-Power-Free TMR-based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme

S. Matsunaga¹、J. Hayakawa²、S. Ikeda¹、K. Miura²、T. Endoh¹、H. Ohno¹、T. Hanyu¹ (1.Tohoku Univ.、2.Hitachi Advanced Res. Lab., Japan)

https://doi.org/10.7567/SSDM.2008.C-3-6