[C-5-2] Low-k Film Damage-Resistant CO Chemistry-based Ash Process for Low-k/Cu Interconnection in Flash Memory Devices

J. Lee¹、W. Park¹、D. H. Kim¹、K. Shin¹、J. Choi¹、I. Chung² (1.Samsung Electronics Co., Ltd.、2.Univ. of Sungkyunkwan, Korea)

https://doi.org/10.7567/SSDM.2008.C-5-2