The Japan Society of Applied Physics

[C-8-1] Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory

T. Murata1、Y. Miyagawa1、R. Matsuda1、M. Tsujiuchi1、S. Ueno1、Y. Takeuchi1、M. Matsuura1、K. Asai1 (1.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.C-8-1