[C-8-1] Effect of NH₃-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory

T. Murata¹、Y. Miyagawa¹、R. Matsuda¹、M. Tsujiuchi¹、S. Ueno¹、Y. Takeuchi¹、M. Matsuura¹、K. Asai¹ (1.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.C-8-1