Effect of NH<sub>3</sub>-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Murata¹, Y. Miyagawa¹, R. Matsuda¹, M. Tsujiuchi¹, S. Ueno¹, Y. Takeuchi¹, M. Matsuura¹, K. Asai¹ (1.Renesas Tech. Corp., Japan)