Resistive Switching Memory using High-&#954; Ta<sub>2</sub>O<sub>5</sub> Films

Y. R. Tsai; S. Maikap; D. Panda; S. Z. Rahaman; C. S. Lai; P. J. Tzeng; C. H. Lin; T. C. Tien; T. Y. Wu; C. C. Wang; M. J. Kao; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2008.C-8-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-8-2] Resistive Switching Memory using High-κ Ta₂O₅ Films

Y. R. Tsai¹, S. Maikap¹, D. Panda¹, S. Z. Rahaman¹, C. S. Lai¹, P. J. Tzeng², C. H. Lin², T. C. Tien², T. Y. Wu², C. C. Wang², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.Industrial Tech. Res. Inst., Taiwan)

https://doi.org/10.7567/SSDM.2008.C-8-2

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2008 International Conference on Solid State Devices and Materials

[C-8-2] Resistive Switching Memory using High-κ Ta2O5 Films

[C-8-2] Resistive Switching Memory using High-κ Ta₂O₅ Films