[C-9-2] Effects of Pre- and Post-treatment of TaN Barrier Metal Deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) Method on Electromigration Resistance in Cu Interconnect

H. C. Lee¹, M. H. Lee¹, B. H. Lee¹, S. C. Kim¹, J. Y. Yang¹, I. Hwangbo¹, J. W. Han¹, K. J. Choi², K. H. Lee², J. H. Jeong² (1.Dongbu HiTek Semiconductor Business, 2.QUROS Co., Ltd., Korea)

https://doi.org/10.7567/SSDM.2008.C-9-2