Excitation Wavelength Dependence of Carrier Relaxation in Self-assembled InAs Quantum Dots Embedded in Strain-relaxed In<sub>0.35</sub>Ga<sub>0.65</sub>As Barrier Layers

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Mukai¹, T. Takahashi¹, K. Morita¹, T. Kitada¹, T. Isu¹ (1.Univ. of Tokushima, Japan)