[E-10-4] Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes

H. Y. Kuo¹, W. C. Lee¹, S. J. Wang¹, K. M. Uang², T. M. Chen², J. C. Chou¹, C. W. Yao¹, H. K. Hsu¹, H. Kuan³ (1.National Cheng Kung Univ., 2.Wu Feng Inst. of Tech., 3.Southern Taiwan Univ. of Tech., Taiwan)

https://doi.org/10.7567/SSDM.2008.E-10-4