Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes

H. Y. Kuo; W. C. Lee; S. J. Wang; K. M. Uang; T. M. Chen; J. C. Chou; C. W. Yao; H. K. Hsu; H. Kuan

doi:https://doi.org/10.7567/SSDM.2008.E-10-4

[E-10-4] Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes

H. Y. Kuo¹、W. C. Lee¹、S. J. Wang¹、K. M. Uang²、T. M. Chen²、J. C. Chou¹、C. W. Yao¹、H. K. Hsu¹、H. Kuan³ (1.National Cheng Kung Univ.、2.Wu Feng Inst. of Tech.、3.Southern Taiwan Univ. of Tech., Taiwan)

https://doi.org/10.7567/SSDM.2008.E-10-4

2008 International Conference on Solid State Devices and Materials

[E-10-4] Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes