Strained and Unstrained InGaAs/InP Quantum-Well Infrared Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition

Y. S. Wang; S. T. Chou; S. Y. Lin; S. J. Chang; W. Lin

doi:https://doi.org/10.7567/SSDM.2008.E-3-5

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-3-5] Strained and Unstrained InGaAs/InP Quantum-Well Infrared Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition

Y. S. Wang^1,2, S. T. Chou³, S. Y. Lin^3,4, S. J. Chang¹, W. Lin² (1.National Cheng Kung Univ., 2.LandMark Optoelectronics Corp., 3.Academia Sinica, 4.National Chiao Tung Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.E-3-5

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