GaAs-based Self-Aligned Laser Incorporating an InGaP Opto-Electronic Confinement Layer

B. J. Stevens; K. M. Groom; D. T. D. Childs; R. R. Alexander; J. S. Roberts; A. S. Helmy; R. A. Hogg

doi:https://doi.org/10.7567/SSDM.2008.E-9-4

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-9-4] GaAs-based Self-Aligned Laser Incorporating an InGaP Opto-Electronic Confinement Layer

B. J. Stevens¹, K. M. Groom¹, D. T. D. Childs¹, R. R. Alexander¹, J. S. Roberts¹, A. S. Helmy², R. A. Hogg¹ (1.Univ. of Sheffield, UK, 2.Univ. of Toronto, Canada)

https://doi.org/10.7567/SSDM.2008.E-9-4

▲