GaAs-based Self-Aligned Laser Incorporating an InGaP Opto-Electronic Confinement Layer

B. J. Stevens; K. M. Groom; D. T. D. Childs; R. R. Alexander; J. S. Roberts; A. S. Helmy; R. A. Hogg

doi:https://doi.org/10.7567/SSDM.2008.E-9-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-9-4] GaAs-based Self-Aligned Laser Incorporating an InGaP Opto-Electronic Confinement Layer

B. J. Stevens¹、K. M. Groom¹、D. T. D. Childs¹、R. R. Alexander¹、J. S. Roberts¹、A. S. Helmy²、R. A. Hogg¹ (1.Univ. of Sheffield, UK、2.Univ. of Toronto, Canada)

https://doi.org/10.7567/SSDM.2008.E-9-4

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