Epitaxial Growth of Vertical Group IV Semiconductor Nanowires on Si(100) Substrate using Anodic Alumina Template

T. Shimizu; Z. Zhang; T. Xie; J. Nishikawa; S. Shingubara; S. Senz; U. Gösele

doi:https://doi.org/10.7567/SSDM.2008.F-1-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-1-3] Epitaxial Growth of Vertical Group IV Semiconductor Nanowires on Si(100) Substrate using Anodic Alumina Template

T. Shimizu¹、Z. Zhang¹、T. Xie¹、J. Nishikawa²、S. Shingubara²、S. Senz¹、U. Gösele¹ (1.Max Planck Inst. of Microstructure Physics, Germany、2.Kansai Univ., Japan)

https://doi.org/10.7567/SSDM.2008.F-1-3

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