Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced MOCVD

H. Asahara; A. Inokuchi; K. Watanuki; M. Hirayama; A. Teramoto; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2008.F-2-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-2-2] Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced MOCVD

H. Asahara^1,2, A. Inokuchi^1,3, K. Watanuki^1,4, M. Hirayama¹, A. Teramoto¹, T. Ohmi¹ (1.Tohoku Univ., 2.ROHM Co., Ltd., 3.Tokyo Electron Ltd., 4.Ube Industries, Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.F-2-2

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