Y<sub>2</sub>O<sub>3</sub> Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

W. R. Liu; Y. H. Li; W. F. Hsieh; C. H. Hsu; W. C. Lee; Y. J. Lee; M. Hong; J. Kwo

doi:https://doi.org/10.7567/SSDM.2008.F-2-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-2-3] Y₂O₃ Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

W. R. Liu¹、Y. H. Li¹、W. F. Hsieh¹、C. H. Hsu^1,2、W. C. Lee³、Y. J. Lee³、M. Hong³、J. Kwo³ (1.National Chiao Tung Univ.、2.National Synchrotron Radiation Res. Center、3.National Tsing Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.F-2-3

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2008 International Conference on Solid State Devices and Materials

[F-2-3] Y2O3 Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

[F-2-3] Y₂O₃ Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)