Y<sub>2</sub>O<sub>3</sub> Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

W. R. Liu; Y. H. Li; W. F. Hsieh; C. H. Hsu; W. C. Lee; Y. J. Lee; M. Hong; J. Kwo

doi:https://doi.org/10.7567/SSDM.2008.F-2-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-2-3] Y₂O₃ Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

W. R. Liu¹, Y. H. Li¹, W. F. Hsieh¹, C. H. Hsu^1,2, W. C. Lee³, Y. J. Lee³, M. Hong³, J. Kwo³ (1.National Chiao Tung Univ., 2.National Synchrotron Radiation Res. Center, 3.National Tsing Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.F-2-3

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2008 International Conference on Solid State Devices and Materials

[F-2-3] Y2O3 Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

[F-2-3] Y₂O₃ Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)