Control of Sn Precipitation and Strain-relaxation in Compositionally Step-graded Ge<sub>1-x</sub>Sn<sub>x</sub> Buffer Layers for Tensile-strained Ge Layers

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. Shimura¹, N. Tsutsui¹, O. Nakatsuka¹, A. Sakai², S. Zaima¹ (1.Nagoya Univ., 2.Osaka Univ., Japan)