[F-6-2] Electrical Characteristics of Ge p-MOSFETs Formed on Si Substrate with Thermal SiON as Gate Dielectric

Y. H. Wu¹、M. L. Wu¹、J. R. Wu¹、Y. S. Lin¹ (1.National Tsing Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.F-6-2