[F-6-2] Electrical Characteristics of Ge p-MOSFETs Formed on Si Substrate with Thermal SiON as Gate Dielectric

Y. H. Wu¹, M. L. Wu¹, J. R. Wu¹, Y. S. Lin¹ (1.National Tsing Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.F-6-2