The Japan Society of Applied Physics

[F-6-3] Comparative Stability Characterization of Bottom Gate a-IGZO Thin Film Transistor Grown by R.F and D.C Sputtering

S. S. Park1、W. H. Choi1、D. H. Nam1、K. I. Chai1、H. D. Lee1、J. K. Jeong2、J. S. Oh3、G. W. Lee1 (1.Chungnam National Univ.、2.Samsung SDI Co., Ltd.、3.National Nanofab Center, Korea)

https://doi.org/10.7567/SSDM.2008.F-6-3