Comparative Stability Characterization of Bottom Gate a-IGZO Thin Film Transistor Grown by R.F and D.C Sputtering

S. S. Park; W. H. Choi; D. H. Nam; K. I. Chai; H. D. Lee; J. K. Jeong; J. S. Oh; G. W. Lee

doi:https://doi.org/10.7567/SSDM.2008.F-6-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-6-3] Comparative Stability Characterization of Bottom Gate a-IGZO Thin Film Transistor Grown by R.F and D.C Sputtering

S. S. Park¹、W. H. Choi¹、D. H. Nam¹、K. I. Chai¹、H. D. Lee¹、J. K. Jeong²、J. S. Oh³、G. W. Lee¹ (1.Chungnam National Univ.、2.Samsung SDI Co., Ltd.、3.National Nanofab Center, Korea)

https://doi.org/10.7567/SSDM.2008.F-6-3

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