[F-8-3] Response of Carbon Nanotube Field Effect Transistors to Vibrating Gate

K. Hata^1,2、Y. Nakayama^3,4、S. Akita^1,4 (1.Osaka Prefecture Univ.、2.Kyoto Univ.、3.Osaka Univ.、4.CREST-JST, Japan)

https://doi.org/10.7567/SSDM.2008.F-8-3