AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance

D. Visalli; J. Derluyn; S. Degroote; M. Leys; K. Cheng; M. Germain; M. Van Hove; G. Borghs

doi:https://doi.org/10.7567/SSDM.2008.G-1-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-1-2] AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance

D. Visalli^1,2, J. Derluyn¹, S. Degroote¹, M. Leys¹, K. Cheng^1,2, M. Germain¹, M. Van Hove¹, G. Borghs^1,2 (1.IMEC, 2.Katholieke Univ. Leuven, Belgium)

https://doi.org/10.7567/SSDM.2008.G-1-2

▲