[G-1-2] AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance

D. Visalli^1,2、J. Derluyn¹、S. Degroote¹、M. Leys¹、K. Cheng^1,2、M. Germain¹、M. Van Hove¹、G. Borghs^1,2 (1.IMEC、2.Katholieke Univ. Leuven, Belgium)

https://doi.org/10.7567/SSDM.2008.G-1-2