[G-1-4] Device Characteristics of MOCVD-Grown InAlN/GaN HEMTs on AlN/Sapphire Template

J. Selvaraj¹、L. Selvaraj¹、M. Miyoshi²、Y. Kuraoka²、M. Tanaka²、T. Egawa¹ (1.Nagoya Inst. of Tech.、2.NGK Insulators Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.G-1-4