[G-1-4] Device Characteristics of MOCVD-Grown InAlN/GaN HEMTs on AlN/Sapphire Template

J. Selvaraj¹, L. Selvaraj¹, M. Miyoshi², Y. Kuraoka², M. Tanaka², T. Egawa¹ (1.Nagoya Inst. of Tech., 2.NGK Insulators Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.G-1-4