[G-1-5] Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

S. Maroldt¹、C. Haupt¹、W. Pletschen¹、S. Müller¹、R. Quay¹、O. Ambacher¹ (1.IAF, Germany)

https://doi.org/10.7567/SSDM.2008.G-1-5