[G-1-5] Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

S. Maroldt¹, C. Haupt¹, W. Pletschen¹, S. Müller¹, R. Quay¹, O. Ambacher¹ (1.IAF, Germany)

https://doi.org/10.7567/SSDM.2008.G-1-5