[G-1-6] High-frequency Characteristics and Effective Saturation Electron Velocity of AlGaN/GaN Heterojunction Field Effect Transistors with AlN or SiN Passivation

N. Tanaka¹, Y. Sumida², H. Kawai², T. Suzuki¹ (1.JAIST, 2.POWDEC K. K., Japan)

https://doi.org/10.7567/SSDM.2008.G-1-6