[G-1-6] High-frequency Characteristics and Effective Saturation Electron Velocity of AlGaN/GaN Heterojunction Field Effect Transistors with AlN or SiN Passivation

N. Tanaka¹、Y. Sumida²、H. Kawai²、T. Suzuki¹ (1.JAIST、2.POWDEC K. K., Japan)

https://doi.org/10.7567/SSDM.2008.G-1-6