[G-1-7] Improved Microwave Performance of AlGaN/GaN MOS-HEMT with Stack Gate HfO₂/Al₂O₃ Structure

Y. Z. Yue¹、Y. Hao¹、J. C. Zhang¹ (1.Xidian Univ., China)

https://doi.org/10.7567/SSDM.2008.G-1-7