[G-2-2] Electron Injection from Emitter to Base in InAlAs/GaAsSb/InP and InP/GaAsSb/InP Double Heterostructure Bipolar Transistors

Y. Matsuoka¹、Y. Ohkubo¹、T. Matsumoto¹、T. Koji¹、Y. Amano¹、A. Takagi¹ (1.Anritsu Corp., Japan)

https://doi.org/10.7567/SSDM.2008.G-2-2