[G-2-3] InAs-Channel HEMTs for Ultra-Low-Power LNA Applications

C. Y. Chang¹、H. T. Hsu²、E. Y. Chang¹、C. I. Kuo¹、Y. Miyamoto³ (1.National Chiao Tung Univ.、2.Yuan Ze Univ., Taiwan、3.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.G-2-3