Analysis of Gate Delay Scaling in In<sub>0.7</sub>Ga<sub>0.3</sub>As-Channel HEMTs

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

S. Fukuda¹, T. Suemitsu¹, T. Otsuji¹, D. H. Kim², J. A. del Alamo² (1.Tohoku Univ., Japan, 2.MIT, USA)