An 85-GHz Distributed Amplifier with 15.5-dBm Output Saturated Power using 0.1-μm InP HEMTs

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. Nakasha¹, M. Sato², T. Ohki², T. Takahashi¹, K. Makiyama¹, Y. Kawano¹, T. Suzuki¹, N. Hara¹ (1.Fujitsu Ltd., 2.Fujitsu Labs. Ltd., Japan)