V<sub>T</sub>-V<sub>SUB</sub> Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN

C. Y. Hu; K. Nakatani; D. Kikuta; M. Sugimoto; J. P. Ao; Y. Ohno

doi:https://doi.org/10.7567/SSDM.2008.G-5-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-5-2] V_T-V_SUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN

C. Y. Hu¹, K. Nakatani¹, D. Kikuta², M. Sugimoto³, J. P. Ao¹, Y. Ohno¹ (1.Univ. of Tokushima, 2.Toyota Central R&D Labs., Inc., 3.Toyota Motor Corp., Japan)

https://doi.org/10.7567/SSDM.2008.G-5-2

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2008 International Conference on Solid State Devices and Materials

[G-5-2] VT-VSUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN

[G-5-2] V_T-V_SUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN