[G-5-2] VT-VSUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN
C. Y. Hu1、K. Nakatani1、D. Kikuta2、M. Sugimoto3、J. P. Ao1、Y. Ohno1
(1.Univ. of Tokushima、2.Toyota Central R&D Labs., Inc.、3.Toyota Motor Corp., Japan)
https://doi.org/10.7567/SSDM.2008.G-5-2