[G-7-2] 4H-SiC Power MOSFETs and SBDs of 1.7kV Rating

N. Miura¹、S. Yoshida¹、Y. Nakao¹、Y. Matsuno¹、K. Kuroda¹、M. Imaizumi¹、H. Sumitani¹、H. Yamamoto¹、T. Oomori¹ (1.Mitsubishi Electric Corp., Japan)

https://doi.org/10.7567/SSDM.2008.G-7-2