[G-7-2] 4H-SiC Power MOSFETs and SBDs of 1.7kV Rating

N. Miura¹, S. Yoshida¹, Y. Nakao¹, Y. Matsuno¹, K. Kuroda¹, M. Imaizumi¹, H. Sumitani¹, H. Yamamoto¹, T. Oomori¹ (1.Mitsubishi Electric Corp., Japan)

https://doi.org/10.7567/SSDM.2008.G-7-2