[G-8-4] Mo-doped ZnO Electrode for IGZO Transparent Thin-film Transistor - Its Hard-saturation Behavior

W. S. Cheong¹, J. H. Shin¹, C. W. Byun¹, M. Ryu¹, C. S. Hwang¹ (1.ETRI, Korea)

https://doi.org/10.7567/SSDM.2008.G-8-4