[H-10-2] Graphene Nanoribbon Transistors and Resonant Tunneling Diodes

G. Liang¹、H. Teong¹、K. Lam¹、N. Neophytou²、D. E. Nikonov³ (1.National Univ. of Singapore, Singapore、2.Purdue Univ.、3.Intel Corp., USA)

https://doi.org/10.7567/SSDM.2008.H-10-2