[H-3-3] High-density Horizontally-aligned Growth of Carbon Nanotubes for High-performance Field-effect Transistors

Y. Ohno¹、D. Phokharatkul¹、H. Nakano²、S. Kishimoto¹、T. Mizutani¹ (1.Nagoya Univ.、2.ULVAC, Inc., Japan)

https://doi.org/10.7567/SSDM.2008.H-3-3