The Japan Society of Applied Physics

[H-5-4] Uniaxially Strained SiGe/Si Core/Shell Nanowire pFETs Integrated on Bulk Si with NixSiyGe1-x-y Source and Drain Contacts

Y. Jiang1,2, N. Singh1, T. Y. Liow1, P. C. Lim3, S. Tripathy3, S. A. Oh3, G. Q. Lo1, D. S. H. Chan2, D. L. Kwong1 (1.Inst. of Microelectronics, 2.National Univ. of Singapore, 3.Inst. of Materials Res. and Eng., Singapore)

https://doi.org/10.7567/SSDM.2008.H-5-4