[H-6-3] Effect of Growth Condition on Well-Arranged InGaN/GaN Nanocolumns Grown by Selective Area Growth (SAG) of rf-Plasma-Assisted Molecular-Beam Epitaxy

H. Sekiguchi^1,2、K. Kishino^1,2、A. Kikuchi^1,2 (1.Sophia Univ.、2.CREST-JST, Japan)

https://doi.org/10.7567/SSDM.2008.H-6-3